Investigation of Ti/TiN multilayered films in a reactive mid-frequency dual-magnetron sputtering

被引:9
|
作者
Xiang, Yu [1 ]
Hua, Meng
Cheng-biao, Wang
Zhi-qiang, Fu
Yang, Liu
机构
[1] China Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China
[2] City Univ Hong Kong, MEEM Dept, Hong Kong, Hong Kong, Peoples R China
[3] Beijing Powertech Co Ltd, Beijing 100072, Peoples R China
基金
中国国家自然科学基金;
关键词
surface defects; reactive mid-frequency dual-magnetron sputtering; adhesion; process parameters;
D O I
10.1016/j.apsusc.2006.08.002
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Influence of the process parameters like (i) sputtering gas pressure, (ii) target current, (iii) substrate bias voltage and (iv) substrate temperature of a reactive mid-frequency dual-magnetron sputtering on (a) surface defects and (b) mechanical properties of Ti/TiN multilayered films was investigated. The forming mechanisms of the observed droplets and craters were analyzed. Results showed when: (1) pressure of Ar/N-2 gases P-Ar/N2 was at 0.31 Pa and substrate temperature was in certain range, the size and the density of the surface defects on the TiN films tended to decrease with increasing the target current and the pulsed bias voltage; (2) the optimal deposition parameters for accomplishing fewer surface defects were used, increasing the thickness of the Ti buffer layer decreased the microhardness in certain level, and the adhesion was firstly increased and then decreased as thickness reaching and/or beyond a critical value. Results also showed that selection of optimized process parameters evidently minimized the surface defects and improved the mechanical properties of the film. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:3705 / 3711
页数:7
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