Effects of annealing conditions on the crystallization and grain growth of metastable Ge2Sb2Te5

被引：6
|
作者：
Park, YJ [1 ]
Lee, JY
Youm, MS
Kim, YT
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Korea Inst Sci & Technol, Semicond Mat & Devices Lab, Seoul 136791, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 1A期
关键词：
Ge2Sb2Te5; TEM; rapid thermal annealing; crystallization; grain growth;
D O I：
10.1143/JJAP.44.326
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Ge2Sb2Te5 thin films deposited by a sputtering method on a SiO2/Si substrate were annealed. and subjected to transmission electron microscopy in order to investigate the crystallization and growth of the metastable Ge2Sb2Te5. The metastable Ge2Sb2Te5 was initially crystallized with 10-nm-sized grains and its sheet resistance was still as high as in the amorphous state. Sheet resistance was abruptly decreased at the grain growth stage after the crystallization.
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页码：326 / 327
页数：2
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