Optical properties of InGaAs alloy films in the E2 region by spectroscopic ellipsometry

被引：0
|
作者：
Ihn, YS [1 ]
Ghong, TH
Kim, YD
Kim, SJ
Aspnes, DE
Yao, T
Koo, BH
机构：
[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea
[2] N Carolina State Univ, Dept Phys, Raleigh, NC 27606 USA
[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[4] Changwon Natl Univ, Dept Ceram Sci & Engn, Taejon 641773, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷
关键词：
ellipsometry; InGaAs alloy; band gap;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report pseudodielectric functions < c > of In-x Ga1-x As alloy films, for several from 0,00 to 0.66. Films were grown on (110) InP substrates by solid-source molecular beam epitaxy. We used chemical etching to remove overlayers and thereby to obtain the best approximation to the bulk dielectric responses is an element of of the films. The dependences of the E-0', E-0' + Delta(0)' E-2 critical point energies on x were obtained by analysis of second ellergy derivatives of the < is an element of > spectra.
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收藏
页码：S242 / S245
页数：4
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