Optical properties of type-II InGaN/GaAsN/GaN quantum wells light-emitting diodes

被引：0
|
作者：
Park, S. -H. [1 ]
Seo, S. B. [1 ]
Kim, J. -J. [1 ]
Kim, H. -M [1 ]
Park, J. [2 ]
Lee, Y. -T. [3 ]
机构：
[1] Catholic Univ Daegu, Dept Elect Engn, Kyongsan 712702, Kyongbuk, South Korea
[2] Korea Inst Ind Technol, Gwangju Res Ctr, Energy & Appl Opt Team, Kwangju 500480, South Korea
[3] Gwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712, South Korea
来源：
NUSOD 2009: 9TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, PROCEEDINGS | 2009年
关键词：
STRAINED WURTZITE SEMICONDUCTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Spontaneous emission spectra of type-II InGaN/GaNAs QW light-emitting diodes are investigated using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures. In the case of a low carrier density, a type-II InGaN/InGaN/GaN QW structure shows much larger matrix element than a conventional InGaN/GaN QW structure. On the other hand, in the case of high carrier density, a type-II QW structure shows slightly smaller matrix element than a conventional QW structure. The type-II InGaN/InGaN/GaN QW structure shows much larger spontaneous emission peak than that of a conventional QW structure. This is mainly due to the fact (hate, in the case of the type-II QW structure, the effective well width is greatly reduced.
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页码：115 / +
页数：2
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