High Efficiency Green Light-Emitting Diodes based on InGaN-ZnGeN2 Type-II Quantum Wells

被引：11
|
作者：
Han, Lu [1 ]
Kash, Kathleen [2 ]
Zhao, Hongping [1 ]
机构：
[1] Case Western Reserve Univ, Dept Elect Engn & Comp Sci, Cleveland, OH 44106 USA
[2] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
来源：
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVIII | 2014年 / 9003卷
基金：
美国国家科学基金会;
关键词：
D O I：
10.1117/12.2038756
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Strain-compensated type-II InGaN-ZnGeN2-AlGaN quantum wells (QWs) are studied as improved active regions for light-emitting diodes (LEDs). Both the band gap and the lattice parameters of ZnGeN2 are very close to those of GaN. The recently predicted large band offset between GaN and ZnGeN2 allows the formation of a type-II heterostructure. The deep confinement of holes in the ZnGeN2 layer allows the use of a low In-content InGaN QW to extend the emission wavelength into the green wavelength region. A thin layer of AlGaN surrounding the QW is used as a strain compensation layer. Simulation studies of the proposed type-II QW indicate an enhancement of 5.6-6.8 times the spontaneous emission rate compared to InGaN-GaN QWs emitting in the green wavelength region.
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页数：5
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