Ka-Band Dual Input Stacked 22 nm CMOS FDSOI Power Amplifier with Transformer-Based Power Combiner

被引：0

作者：

Rusanen, Jere ^{[1
]}

Tervo, Nuutti ^{[1
]}

Rahkonen, Timo ^{[1
]}

Parssinen, Aarno ^{[1
]}

Aikio, Janne P. ^{[1
]}

机构：

[1] Univ Oulu, Dept Informat Technol & Elect Engn, Oulu, Finland

来源：

2020 15TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2021年

基金：

芬兰科学院;

关键词：

AM-PM; CMOS; mmWave; PA; SOI; DESIGN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Ka-band dual input, three stack power amplifier (PA) is designed and fabricated using 22nm CMOS FDSOI. The PA output matching is implemented with a transformer-based combiner, which allows tuning the load with bias and input drive settings. The PA shows maximum output power, gain, one dB output power compression point (P-1dB) and power added efficiency (PAE) of 19.5dBm, 11.5dB, 14.1dBm and 17%, respectively, measured at 29.5GHz. Measured amplitude to phase modulation (AM-PM) stays at very low level, below 0.7 degrees up to P-1dB and below 2.6 degrees up to P-3dB. With a 100MHz 64-QAM OFDM signal the PA achieves 8% error vector magnitude (EVM) and -28 dBc adjacent channel leakage ratio (ACLR) at 6.3dBm and 7.6dBm output channel power, respectively.

引用

页码：145 / 148

页数：4

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