RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

被引：36
|
作者：
Markov, VA
Cheng, HH
Chia, CT
Nikiforov, AI
Cherepanov, VA
Pchelyakov, OP
Zhuravlev, KS
Talochkin, AB
McGlynn, E
Henry, MO
机构：
[1] Tohoku Univ, Sci Measurements Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10764, Taiwan
[3] Natl Taiwan Normal Univ, Dept Phys, Taipei 117, Taiwan
[4] Inst Semicond Phys, Novosibirsk 630090, Russia
[5] Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland
来源：
THIN SOLID FILMS | 2000年 / 369卷 / 1-2期
关键词：
germanium; silicon; self-organization; quantum dot;
D O I：
10.1016/S0040-6090(00)00839-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The initial stages of Ge growth on the Si(001)-(2 x 1) surface have been studied by using a RHEED pattern zero-streak profile analysis technique. Thicknesses for {105} and {113} facets formation, corresponding to the nucleation of coherent 'hut'-clusters and dislocated 'dome' three-dimensional (3D) islands respectively, were determined in a growth temperature range of about 200-600 degrees C. Multilayer structures containing ultra-small Ge quantum dots (QDs) with a plane size of about 10 nm and a height of 1.5 nm have been studied by photoluminescence (PL). PL bands assigned to QDs show an intensity comparable to data in the literature, but a band width five times smaller. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：79 / 83
页数：5
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