Crystalline structure defects and strength of Si and Ge

The transport phenomena and mechanical strength of monocrystalline Si and Ge were investigated at extremely high uniaxial stress. The low temperature plasticity was studied by the conductivity recording and the metallographic method. It was established that the real mechanical strength of Si and Ge crystals was substantially lower than a theoretical one and it is determined by the presence of different crystalline structure defects caused by the growth conditions.