Defects incorporating Ge atoms in irradiated Si:Ge

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作者：
Sobolev, N.A. [1 ,2 ]
Nazaré, M.H. [1 ]
机构：
[1] Departamento de Física, Universidade de Aveiro, 3810-193 Aveiro, Portugal
[2] Inst. Solid Stt. Semiconduct. Phys., Ul. P. Brovki 17, 220072, Minsk, Belarus
来源：
Physica B: Condensed Matter | 1999年 / 273卷
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页码：271 / 274
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