Electric transport properties of single-walled carbon nanotubes functionalized by plasma ion irradiation method

被引：0

作者：

Jeong, GH ^{[1
]}

Izumida, T ^{[1
]}

Hirata, T ^{[1
]}

Hatakeyama, R ^{[1
]}

Neo, Y ^{[1
]}

Mimura, H ^{[1
]}

Omote, K ^{[1
]}

Kasama, Y ^{[1
]}

Jhang, SH ^{[1
]}

Park, YW ^{[1
]}

机构：

[1] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan

来源：

2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY | 2004年

关键词：

carbon; encapsulation; FETs; nanotechnology; plasma applications; semiconductor devices;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report experimental results of the electric transport properties of single-walled carbon nanotubes (SWNTs) functionalized by plasma ion irradiation method, where purified SWNTs and Cs-encasulating SWNTs are used. SWNTs bundles are well dropped between source and drain electrodes of the filed effect transistor (FET) configuration. Voltage-current characteristics, gate bias dependence, and measuring temperature dependence are investigated. It is found that purified SWNTs exibit p-type semiconducting behavior. Transport measurements for Cs encapsulating individual SWNTs have also been performed, the result of which is discussed.

引用

页码：544 / 546

页数：3

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