Simulation and characterization of short-channel organic thin-film transistors fabricated using ink-jet printing and an imprint process

被引：1

作者：

Bae, Juhyun ^{[1
]}

Kim, Kyohyeok ^{[2
]}

Kwon, Namyong ^{[3
]}

Chung, Ilsub ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon 440746, South Korea

[2] Samsung Elect Co Ltd, Semicond R&D Ctr, Hwasung City 445701, Gyeonggi Do, South Korea

[3] Samsung Elect, Memory Div Semicond Business, San 16 Banwol Dong, Hwasung City 449711, Gyeonggi Do, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2017年 / 35卷 / 03期

关键词：

FIELD-EFFECT TRANSISTORS; 6,13-BIS(TRIISOPROPYLSILYLETHYNYL) PENTACENE; OTFT;

D O I：

10.1116/1.4981930

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors fabricated short-channel organic thin-film transistors (OTFTs) on a polyethersulphone substrate using ink-jet printing combined with an imprint method. 6,13-bis(triisopropylsilylethynyl) pentacene and polyvinyl alcohol were used as an active material and a gate insulator, respectively, in the OTFT fabrication. The channel length was reduced remarkably by interfacing ink-jet printing with imprint technology. The authors obtained an OTFT mobility of approximately 0.25 cm(2)/V s in the saturation region, and the OTFT threshold voltage was approximately -2.5 V. The results were compared with the simulated results to understand the variations in the device structure and material properties. (C) 2017 American Vacuum Society.

引用

页数：9

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