Dielectric surface passivation for silicon solar cells: A review

被引:211
|
作者
Bonilla, Ruy S. [1 ]
Hoex, Bram [2 ]
Hamer, Phillip [1 ,2 ]
Wilshaw, Peter R. [1 ]
机构
[1] Univ Oxford, Dept Mat, Parks Rd, Oxford OX1 4NH, England
[2] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia
基金
英国工程与自然科学研究理事会;
关键词
chemical vapour deposition; dielectric coatings; silicon solar cells; surface passivation; CHEMICAL-VAPOR-DEPOSITION; P-TYPE SILICON; FIELD-EFFECT PASSIVATION; INTERFACE STATE DENSITY; ATOMIC LAYER DEPOSITION; ULTRATHIN AL2O3 FILMS; CRYSTALLINE SILICON; AMORPHOUS-SILICON; RECOMBINATION VELOCITY; N-TYPE;
D O I
10.1002/pssa.201700293
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many places are now providing a substantial portion of electricity generation. Further adoption of this technology will require processing that minimises losses in device performance. A fundamental mechanism for efficiency loss is the recombination of photo-generated charge carriers at the unavoidable cell surfaces. Dielectric coatings have been shown to largely prevent these losses through a combination of different passivation mechanisms. This review aims to provide an overview of the dielectric passivation coatings developed in the past two decades using a standardised methodology to characterise the metrics of surface recombination across all techniques and materials. The efficacy of a large set of materials and methods has been evaluated using such metrics and a discussion on the current state and prospects for further surface passivation improvements is provided. (C) 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页数:30
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