Surface passivation layers for multicrystalline silicon solar cells

被引：0

作者：

Ponce-Alcántara, S ^{[1
]}

Wright, DN ^{[1
]}

Del Cañizo, C ^{[1
]}

Luque, A ^{[1
]}

机构：

[1] Univ Politecn Madrid, ETSI Telecomun, Inst Energia Solar, E-28040 Madrid, Spain

来源：

2005 Spanish Conference on Electron Devices, Proceedings | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Both silicon oxide and silicon nitride have the potential to efficiently passivate phosphorus emitters of silicon solar cells. A comparison of the two techniques is carried out in this work for multicrystalline substrates. Optimisation of deposition conditions for silicon nitride by remote PECVD leads to very low surface recombination velocities under 200 cm/s.

引用

页码：295 / 298

页数：4

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