Structural, optical and electrical properties of Hf-doped ZnO transparent conducting films prepared by sol-gel method

被引：18

作者：

Wang, Fenggui ^{[1
]}

Zhao, Xiaoru ^{[1
]}

Duan, Libing ^{[1
]}

Wang, Yajun ^{[1
]}

Niu, Hongru ^{[1
]}

Ali, Amjed ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Key Lab Space Appl Phys & Chem, Minist Educ China, Sch Sci, Xian 710072, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 623卷

基金：

中国国家自然科学基金;

关键词：

Hf-doped ZnO; Photoluminescence; Resistivity; Sol-gel method; HFXZN1-XO THIN-FILMS; ANNEALING TEMPERATURE; DOPING CONCENTRATION; HIGHLY TRANSPARENT; RADICAL OXIDATION; DEPOSITION; MICROSTRUCTURE; ORIENTATION; THICKNESS; GROWTH;

D O I：

10.1016/j.jallcom.2014.10.117

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hafnium doped zinc oxide (HZO) thin films with various Hf contents ( 0, 1, 3, 5, 7 at.%) at different solution concentrations (0.15-0.75 mol/L) were deposited on the glass substrates using sol-gel method. The structural, optical and electrical properties were investigated by means of XRD, PL and Hall-effect measurement. The results show that Hf ions could substitute Zn ions effectively and improve the crystallinity of ZnO significantly with highly preferred c-axis orientation. Based on photoluminescence and transmittance measurements, the strong ultraviolet emission band exhibits a blue shift and its intensity is found to rise with the increasing of Hf-doping density. Furthermore, the resistivity shows a bell curve and the minimum value is 5.6 x 10(3) Omega cm for the HZO film with 3 at.% Hf, which is lower than that of the typical Al-doped ZnO thin films using sol-gel method. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：290 / 297

页数：8

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