GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range

被引：4
|
作者：
Kunitsyna, E. V. [1 ]
Andreev, I. A. [1 ]
Konovalov, G. G. [1 ]
Ivanov, E. V. [1 ]
Pivovarova, A. A. [1 ]
Il'inskaya, N. D. [1 ]
Yakovlev, Yu. P. [1 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2018年 / 52卷 / 09期
关键词：
SOLID-SOLUTIONS;
D O I：
10.1134/S1063782618090099
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
GaSb/GaAlAsSb uncooled photodiodes for the 1.1-1.85 mu m spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentration in the active region: n = 2 x 10(15) cm(-3). The capacitance of the photodiodes is 70-110 pF for a sensitive -area diameter of 300 mu m and 150-250 pF for a diameter of 500 mu m. The photodiodes are characterized by a high (for GaSb devices) spectral sensitivity S (lambda) = 0.95 A/W at the maximum, a relatively low reverse dark current density j = (4-9) x 10(-3) A/cm(2) at U (rev) = 1.0-2.0 V, and high-speed performance (response time 5-10 ns).
引用
收藏
页码：1215 / 1220
页数：6
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