ULTRA LOW VOLTAGE AND HIGH SPEED CMOS CARRY GENERATE CIRCUITS

被引：0
|
作者：
Berg, Y. [1 ]
Mirmotahari, O. [1 ]
机构：
[1] Univ Oslo, Dept Informat, N-0316 Oslo, Norway
来源：
2009 EUROPEAN CONFERENCE ON CIRCUIT THEORY AND DESIGN, VOLS 1 AND 2 | 2009年
关键词：
FLOATING-GATE CIRCUITS;
D O I：
10.1109/ECCTD.2009.5274990
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we present different ultra low-voltage CMOS carry generate circuits. The circuits may operate at supply voltages below the inherent threshold voltage of the transistors while maintaining a current level of transistors operating in strong inversion. The circuits show an improved performance compared to complementary CMOS in terms of delay. Preliminary results indicate a reduced delay to approximately 1/10 of a complementary CMOS design. Simulated data for a ST 90nm CMOS process are included.
引用
收藏
页码：69 / 72
页数：4
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