Dry etch improvements in the SOI Wafer Flow Process for IPL stencil mask fabrication

被引：27
|
作者：
Letzkus, F
Butschke, J
Höfflinger, B
Irmscher, M
Reuter, C
Springer, R
Ehrmann, A
Mathuni, J
机构：
[1] Inst Mikroelekt Stuttgart, D-70569 Stuttgart, Germany
[2] Infineon Technol AG, D-81617 Munich, Germany
来源：
MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(00)00388-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The 4x Ion Projection Lithography (IPL), which is designed to reach sub 100nm resolution on the wafer plane, uses stencil membrane masks out of 150mm SOI (Silicon On Insulator) wafers [1]. The structured circular membranes have a diameter of 126mm and a thickness of 3 mu m. Results of a new sub-quarter micron trench etch and membrane dry etch process are presented and discussed.
引用
收藏
页码：609 / 612
页数：4
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