GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes

被引：7

作者：

Berkovits, V. L. ^{[2
]}

Ulin, V. P. ^{[2
]}

Tereshchenko, O. E. ^{[3
]}

Paget, D. ^{[1
]}

Rowe, A. C. H. ^{[1
]}

Chiaradia, P. ^{[4
,5
]}

Doyle, B. P. ^{[6
]}

Nannarone, S. ^{[6
,7
,8
]}

机构：

[1] Ecole Polytech, CNRS, F-91128 Palaiseau, France

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Novosibirsk State Univ, Inst Semicond Phys, Novosibirsk 630090, Russia

[4] Univ Roma Tor Vergata, Dipartimento Fis, CNISM Unit, I-00133 Rome, Italy

[5] Univ Roma Tor Vergata, NAST, I-00133 Rome, Italy

[6] CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy

[7] Univ Modena & Reggio Emilia, Dipartimento Ingn Mat & Ambiente, I-41100 Modena, Italy

[8] CNISM, I-41100 Modena, Italy

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 23期

关键词：

adsorption; gallium arsenide; III-V semiconductors; photoelectron spectra; polaritons; GAAS-SURFACES; PHOTOEMISSION-SPECTROSCOPY; NITRIDATION; CHEMISTRY; PASSIVATION; NITROGEN; SULFUR; PLASMA; (111)A; GAN;

D O I：

10.1103/PhysRevB.80.233303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 10(3) times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS- and OH- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.

引用

页数：4

共 32 条

[31] Ab initio-based approach to initial growth processes on GaAs(111)B-(2x2) surfaces:: Self-surfactant effect of Ga adatoms revisited
Tatematsu, Hiroaki
Sano, Kosuke
Akiyama, Toru
Nakamura, Kohji
Ito, Tomonori
PHYSICAL REVIEW B, 2008, 77 (23)
[32] ARSENIC PRESSURE-DEPENDENCE OF THE SURFACE-DIFFUSION IN MOLECULAR-BEAM EPITAXY ON (111)B-(001) MESA-ETCHED GAAS SUBSTRATES STUDIED BY IN-SITU SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
SHEN, XQ
NISHINAGA, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (8B): : L1117 - L1119

← 1 2 3 4 →