GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes

被引：7

作者：

Berkovits, V. L. ^{[2
]}

Ulin, V. P. ^{[2
]}

Tereshchenko, O. E. ^{[3
]}

Paget, D. ^{[1
]}

Rowe, A. C. H. ^{[1
]}

Chiaradia, P. ^{[4
,5
]}

Doyle, B. P. ^{[6
]}

Nannarone, S. ^{[6
,7
,8
]}

机构：

[1] Ecole Polytech, CNRS, F-91128 Palaiseau, France

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Novosibirsk State Univ, Inst Semicond Phys, Novosibirsk 630090, Russia

[4] Univ Roma Tor Vergata, Dipartimento Fis, CNISM Unit, I-00133 Rome, Italy

[5] Univ Roma Tor Vergata, NAST, I-00133 Rome, Italy

[6] CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy

[7] Univ Modena & Reggio Emilia, Dipartimento Ingn Mat & Ambiente, I-41100 Modena, Italy

[8] CNISM, I-41100 Modena, Italy

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 23期

关键词：

adsorption; gallium arsenide; III-V semiconductors; photoelectron spectra; polaritons; GAAS-SURFACES; PHOTOEMISSION-SPECTROSCOPY; NITRIDATION; CHEMISTRY; PASSIVATION; NITROGEN; SULFUR; PLASMA; (111)A; GAN;

D O I：

10.1103/PhysRevB.80.233303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 10(3) times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS- and OH- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.

引用

页数：4

共 32 条

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Berkovits, V. L.
Ulin, V. P.
Tereshchenko, O. E.
Paget, D.
Rowe, A. C. H.
Chiaradia, P.
Doyle, B. P.
Nannarone, S.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (03) : D127 - D135
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Berkovits, V. L.
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Makarenko, I. V.
Ulin, V. P.
APPLIED SURFACE SCIENCE, 2008, 254 (24) : 8023 - 8028
[3] POLARITY DEPENDENCE OF CONTACT ANGLES BETWEEN LIQUID GALLIUM AND [111] SURFACES OF GAAS
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PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 228 (02): : 529 - 532
[5] Ab initio calculations of GaN initial growth processes on GaAs(111)A and GaAs(111)B surfaces
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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (02): : 553 - 556
[6] TEMPERATURE DEPENDENCE OF SURFACE POTENTIALS OF GAAS (111) AND CDS (0001) SURFACES
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[7] Soft nitridation of GaAs(100) by hydrazine sulfide solutions: Effect on surface recombination and surface barrier
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Ulin, V. P.
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APPLIED PHYSICS LETTERS, 2007, 90 (02)
[8] A first-principles surface phase diagram study for Si-adsorption processes on GaAs(111)A surfaces
Akiyama, Toru
Tatematsu, Hiroaki
Nakamura, Kohji
Ito, Tomonori
SURFACE SCIENCE, 2010, 604 (02) : 171 - 174
[9] Extremely High- and Low-Density of Ga Droplets on GaAs{111}A,B: Surface-Polarity Dependence
Ohtake, Akihiro
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CRYSTAL GROWTH & DESIGN, 2015, 15 (01) : 485 - 488
[10] Wet chemical treatment in hydrazine-sulfide solutions for sulfide and nitride monomolecular surface films on GaAs(100)
Berkovits, VL
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (05) : G349 - G353

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