Recent advances in the application of slow positron beams to the study of ion implantation defects in silicon

被引：21
|
作者：
Knights, AP [1 ]
Coleman, PG
机构：
[1] Univ Surrey, Surrey Ion Beams Ctr, Sch Elect Engn Informat Technol & Math, Guildford GU2 5XH, Surrey, England
[2] Univ Bath, Sch Phys, Bath BA2 7AY, Avon, England
来源：
DEFECTS AND DIFFUSION IN SEMICONDUCTORS: ANNUAL RETROSPECTIVE III | 2000年 / 183-1卷
关键词：
Positron Annihilation; vacancy; silicon; ion implantation;
D O I：
10.4028/www.scientific.net/DDF.183-185.41
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We review the most significant advances in the application of beam-based Positron Annihilation Spectroscopy (PAS) to ion implantation induced defects in silicon. Recent developments in the experimental technique and some prominent success stories are highlighted. These include descriptions of 2-detector Doppler broadening, enhanced depth resolution and beam lifetime measurements and applications to ion beam dosimetry, SIMOX formation and impurity gettering. The review concludes with suggestions for future trends in PAS. The technique is currently enjoying a high profile in ion implantation research. However, the need for the PAS community to consolidate current understanding and develop further the measurement and interpretation of data is paramount if PAS is to be regarded as the technique of choice for probing open-volume defects in silicon.
引用
收藏
页码：41 / 52
页数：12
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