High mobility 2D electron gas in iodine modulation doped CdTe/CdMgTe heterostructures

被引：74
|
作者：
Karczewski, G [1 ]
Jaroszynski, J [1 ]
Barcz, A [1 ]
Kutrowski, M [1 ]
Wojtowicz, T [1 ]
Kossut, J [1 ]
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷
关键词：
molecular beam epitaxy; modulation doping; quantum Hall effect;
D O I：
10.1016/S0022-0248(98)80169-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report on growth and characterization of modulation doped CdTe/Cd1-yMgyTe quantum well structures. Well resolved Shubnikov-de Haas oscillations and quantum Hall effect have been observed. In the best CdTe/Cd1-yMgyTe structures the modulation doping enabled fabrication of a two-dimensional electron gas with mobility exceeding 10(5) cm(2)/V s. This is the highest mobility reported in wide-gap II-VI materials. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：814 / 817
页数：4
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