Ultrafast photocarrier dynamics in nanocrystalline ZnOxNy thin films

被引：4

作者：

Shin, Taeho ^{[1
]}

Lee, Eunha ^{[1
]}

Sul, Soohwan ^{[1
]}

Lee, Hyungik ^{[1
]}

Ko, Dong-Su ^{[1
]}

Benayad, Anass ^{[1
]}

Kim, Hyun-Suk ^{[2
,3
]}

Park, Gyeong-Su ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Analyt Sci Grp, Suwon 443803, Gyeonggi Do, South Korea

[2] Samsung Adv Inst Technol, Display Lab, Suwon 443803, Gyeonggi Do, South Korea

[3] Chungnam Natl Univ, Dept Mat Sci & Engn, Taejon 305764, South Korea

来源：

OPTICS LETTERS | 2014年 / 39卷 / 17期

关键词：

HIGH-MOBILITY; PHOTOLUMINESCENCE; TRANSISTORS;

D O I：

10.1364/OL.39.005062

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We examined the ultrafast dynamics of photocarriers in nanocrystalline ZnOxNy thin films as a function of compositional variation using femtosecond differential transmittance spectroscopy. The relaxation dynamics of photogenerated carriers and electronic structures are strongly dependent on nitrogen concentration. Photocarriers of ZnOxNy films relax on two different time scales. Ultrafast relaxation over several picoseconds is observed for all chemical compositions. However, ZnO and oxygen-rich phases show slow relaxation (longer than several nanoseconds), whereas photocarriers of films with high nitrogen concentrations relax completely on subnanosecond time scales. These relaxation features may provide a persistent photocurrent-free and prompt photoresponsivity for ZnOxNy with high nitrogen concentrations, as opposed to ZnO for display applications. (C) 2014 Optical Society of America

引用

页码：5062 / 5065

页数：4

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