W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology

被引：20
|
作者：
Thome, Fabian [1 ]
Leuther, Arnulf [1 ]
Heinz, Felix [1 ]
Ambacher, Oliver [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys IAF, D-79108 Freiburg, Germany
来源：
2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2019年
关键词：
Balanced amplifiers; high-electron-mobility transistors (HEMTs); low-noise amplifiers (LNAs); millimeter-wave integrated circuits (MMICs); E-band; W-band;
D O I：
10.1109/mwsym.2019.8700792
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the design, analysis, and room-temperature performance of two W-band LNA MMICs fabricated in two different technology variations are presented. The investigation demonstrates the noise improvement of the given 50-nm gate-length InGaAs mHEMT technology with reduced necessary drain currents. Therefore, a single-ended and balanced W-band LNA MMIC were designed, fabricated, and characterized. The amplifiers exhibit state-of-the-art noise temperatures with an average value for the single-ended LNA of 159K (1.9 dB) with lowest values of 132K (1.6 dB). Due to the technology investigation it was possible to reduce the noise temperature by about 15K compared to the reference technology in combination with superior MMIC yield.
引用
收藏
页码：168 / 171
页数：4
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