1.3 μm InAs/GaAs High-Density Quantum Dot Lasers

被引：2

作者：

Tanaka, Yu ^{[1
,2
,3
,7
]}

Ishida, Mitsuru ^{[6
]}

Takada, Kan ^{[6
]}

Maeda, Yasunari ^{[3
]}

Akiyama, Tomoyuki ^{[3
]}

Yamamoto, Tsuyoshi ^{[1
,2
,7
]}

Song, Hai-zhi ^{[1
]}

Yamaguchi, Masaomi ^{[3
]}

Nakata, Yoshiaki ^{[1
,3
]}

Nishi, Kenichi ^{[3
]}

Sugawara, Mitsuru ^{[1
,2
,3
,7
]}

Arakawa, Yasuhiko ^{[4
,5
,6
]}

机构：

[1] Fujitsu Labs Ltd, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan

[2] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan

[3] QD Laser Inc, Tokyo 1000004, Japan

[4] Univ Tokyo, IIS, Tokyo 1538505, Japan

[5] Univ Tokyo, RCAST, Tokyo 1538505, Japan

[6] Univ Tokyo, Nano Quine, Tokyo 1538505, Japan

[7] Optoelect Ind & Technol Dev Assoc, Tokyo 1120014, Japan

来源：

2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 | 2009年

关键词：

DEPENDENCE;

D O I：

10.1109/LEOS.2009.5343392

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on newly developed high-density quantum-dot lasers that provide extremely temperature-insensitive 10.3 Gb/s operation and higher-speed operation up to 20 Gb/s which is the first demonstration in 1.3 mu m quantum-dot lasers.

引用

页码：668 / +

页数：2

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