Medical imaging with mercuric iodide direct digital radiography flat-panel X-ray detectors

被引:8
|
作者
Gilboa, H [1 ]
Zuck, A [1 ]
Dagan, O [1 ]
Vilensky, A [1 ]
Breen, BN [1 ]
Taieb, A [1 ]
Reisman, B [1 ]
Hermon, H [1 ]
Zentai, G [1 ]
Partain, L [1 ]
Street, R [1 ]
Ready, S [1 ]
机构
[1] Real Time Radiog, IL-91487 Jerusalem, Israel
关键词
imaging; X-ray radiology; polycrystalline; mercuric iodide; imaging detectors; Flat-Panel imaging arrays;
D O I
10.1117/12.450503
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Photoconductive polycrystalline mercuric iodide coated on amorphous silicon flat panel thin film transistor (TFT) arrays is the best candidate for direct digital X-ray detectors for radiographic and fluoroscopic applications in medical imaging. The mercuric iodide is vacuum deposited by Physical Vapor Deposition (PVD). This coating technology is capable of being scaled up to sizes required in common medical imaging, applications. Coatings were deposited on 2"X2" and 4"X4" TFT arrays for imaging performance evaluation arid also on conductive-coated glass substrates for measurements of X-ray sensitivity and dark current. TFT arrays used included pixel pitch dimensions of 100, 127 and 139 microns: Coating thickness between 150 microns and 250 microns were tested with beam energy between 25 kVP and 100 kVP utilizing exposure ranges typical for both fluoroscopic, and radiographic imaging. X-ray sensitivities measured for the mercuric iodide samples and coated TFT detectors were superior to any published results for competitive materials (up to 7100 ke/mR/pixel for 100 micron pixels). It is believed that this higher sensitivity can result in fluoroscopic imaging signal levels high enough to overshadow electronic noise. Diagnostic quality of radiographic and fluroscopic images of up to 15 pulses per second were demonstrated. Image lag characteristics appear adequate for fluoroscopic rates. Resolution tests on resolution target phantoms showed that resolution is limited to the TFT array Nyquist frquency including detectors with pixel size of 139 microns (resolution similar to3.6 lp/mm) and 127 microns (resolution similar to3.9 lp/mm). The ability to operate at low voltages (similar to0.5 volt/ micron) gives adequate dark currents for most applications and allows low voltage electronics designs.
引用
收藏
页码:315 / 325
页数:11
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