Asymmetric, nonbroadened waveguide structures for double QW high-power 808nm diode laser

被引：1

作者：

Abbasi, S. P. ^{[1
,2
]}

Mahdieh, M. H. ^{[2
]}

机构：

[1] Iran Univ Sci & Technol, Dept Phys, Tehran, Iran

[2] Iranian Natl Ctr Laser Sci & Technol, Tehran, Iran

来源：

XXI INTERNATIONAL SYMPOSIUM ON HIGH POWER LASER SYSTEMS AND APPLICATIONS 2016 | 2017年 / 10254卷

关键词：

Diode laser; asymmetric; quantum well; HETEROSTRUCTURE; IMPROVEMENT; OUTPUT;

D O I：

10.1117/12.2257308

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, we propose an asymmetric epitaxial layer structre for designing 808nm diode laser. In this asymmetric sructure, the p-waveguide is reduced in thickness and the p-cladding is doped for increasing the thermal conductivity and consequently better heat extraction. The main purpose of using such design is enhancing the laser gain by reduction of loss in laser cavity, and reduction of electrical and thermal resistivity of the diode laser.

引用

页数：6

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