Enhanced Charge Transfer Kinetics of Dye Sensitized Solar Cells Using a Nb2O5/ZnO Heterojunction Nanorod Photoanode

被引：5

作者：

Park, Ji Young ^{[1
]}

Yun, Hyeong Jin ^{[1
]}

Min, Bong-Ki ^{[2
]}

Ahn, Kwang-Soon ^{[1
]}

Lee, Do Kyung ^{[3
]}

Kim, Jae Hong ^{[1
]}

机构：

[1] Yeungnam Univ, Dept Chem Engn, Kyongsan 712749, South Korea

[2] Yeungnam Univ, Ctr Res Facil, Kyongsan 712749, South Korea

[3] Catholic Univ Daegu, Dept Adv Energy Mat Sci & Engn, Kyongsan 712749, South Korea

来源：

SCIENCE OF ADVANCED MATERIALS | 2016年 / 8卷 / 04期

关键词：

Nb2O5; Energy Barrier Layer; ZnO; Photoanode; ELECTRODES;

D O I：

10.1166/sam.2016.2676

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper presents a novel strategy for the design of efficient DSSCs using a Nb2O5 energy barrier layer on ZnO nanorods. A monoclinic Nb2O5 energy barrier layer can be deposited readily on a ZnO nanorod by dip-coating method. The optimized Nb2O5/ZnO photoanode exhibits eta, J(sc), V-oc, and FF values of 0.56%, 1.96 mA/cm(2), 0.58 V, and 56%, respectively, which is 30% better than those obtained using the ZnO photoanode. This can be attributed to a decrease in the probability of charge recombination and an increase in the electron collection efficiency due to the presence of a Nb2O5 energy barrier layer between ZnO and the photosensitizer.

引用

页码：749 / 753

页数：5

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