A carrier escape study from InP/InGaAs single quantum well solar cells

被引：23

作者：

Zachariou, A

Barnes, J

Barnham, KWJ

Nelson, J

Tsui, ESM

Epler, J

Pate, M

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2BZ, England

[2] Paul Scherrer Inst, CH-8048 Zurich, Switzerland

[3] Univ Sheffield, EPSRC Facil 3 5, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 02期

关键词：

D O I：

10.1063/1.366771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier escape from InP/AlGaAs single quantum well structures is studied by means of simultaneous steady state photocurrent and photoluminescence measurements. The activation energy for escape is measured for the first time in this system. The photoluminescence from the InGaAs wells indicates that a significant number of carriers do not escape at room temperature thus affecting the temperature dependence of the cell. An estimate of the nonradiative efficiency of the device studied is given as a function of bias and temperature. The relevance to new applications is discussed. (C) 1998 American Institute of Physics. [S0021-8979(98)05801-0].

引用

页码：877 / 881

页数：5

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