Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method

被引：3

作者：

Sun, Lili ^{[1
]}

Liu, Chao ^{[1
]}

Li, Jianming ^{[1
]}

Wang, Junxi ^{[1
]}

Yan, Fawang ^{[1
]}

Zeng, Yiping ^{[1
]}

Li, Jinmin ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

MATERIALS LETTERS | 2010年 / 64卷 / 09期

关键词：

Magnetic materials; Semiconductors; Ion implantation; GAN; ER;

D O I：

10.1016/j.matlet.2010.01.087

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diluted-magnetic GaN:Sm:Eu films have been fabricated by co-implantation of Sm and Eu ions into c-plane (0001) GaN films and a subsequent annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The XRD and AFM analyses show that the annealing process can effectively recover the crystalline degradation caused by implantation. Compared with GaN:Sm films, more defects have been introduced into GaN:Sm:Eu films due to the Eu implantation process. According to the SQUID analysis, GaN:Sm:Eu films exhibit clear room-temperature ferromagnetism. Moreover, GaN:Sm:Eu films show a lower saturation magnetization (Ms) than GaN:Sm films. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1031 / 1033

页数：3

共 50 条

[1] Structural and Magnetic Properties of Sm Implanted GaN
Jiang Li-Juan
Wang Xiao-Liang
Xiao Hong-Ling
Wang Zhan-Guo
Feng Chun
Zhang Min-Lan
Tang Jian
CHINESE PHYSICS LETTERS, 2009, 26 (07)
[2] C and N co-implantation in Be-doped GaN
Liu, KT
Su, YK
Chuang, RW
Chang, SJ
Horikoshi, Y
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (08) : 740 - 744
[3] Co-implantation of Be+O and Mg+O into GaN
1600, American Institute of Physics Inc. (90):
[4] Structural and Luminescent Properties of GaN：Eu，Dy Films
Chen H.
Luo X.
Wang X.
Mao H.
Zeng X.
Xu K.
Xiyou Jinshu/Chinese Journal of Rare Metals, 2023, 47 (03): : 381 - 389
[5] Effect of N/Ge co-implantation on the Ge activation in GaN
Nakano, Y
Kachi, T
APPLIED PHYSICS LETTERS, 2001, 79 (10) : 1468 - 1470
[6] Co-implantation of Be+O and Mg+O into GaN
Kent, DG
Overberg, ME
Pearton, SJ
JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) : 3750 - 3753
[7] Silicon-on-nothing MOSFETs fabricated with hydrogen and helium co-implantation
Bu Wei-Hai
Huang Ru
Li Ming
Tian Yu
Wu Da-Ke
Chan Man-Sun
Wang Yang-Yuan
CHINESE PHYSICS, 2006, 15 (11): : 2751 - 2755
[8] Single G centers in silicon fabricated by co-implantation with carbon and proton
Baron, Yoann
Durand, Alrik
Herzig, Tobias
Khoury, Mario
Pezzagna, Sebastien
Meijer, Jan
Robert-Philip, Isabelle
Abbarchi, Marco
Hartmann, Jean-Michel
Reboh, Shay
Gerard, Jean-Michel
Jacques, Vincent
Cassabois, Guillaume
Dreau, Anais
APPLIED PHYSICS LETTERS, 2022, 121 (08)
[9] Influence of O and C co-implantation on the lattice site of Er in GaN
De Vries, B
Matias, V
Vantomme, A
Wahl, U
Rita, EMC
Alves, E
Lopes, AML
Correia, JG
APPLIED PHYSICS LETTERS, 2004, 84 (21) : 4304 - 4306
[10] Structural and magnetic properties of Co doped GaN
Sawahata, J
Bang, H
Takiguchi, M
Seo, J
Yanagihara, H
Kita, E
Akimoto, K
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2458 - 2462

← 1 2 3 4 5 →