Growth and structural property studies on NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition

被引:11
|
作者
Nazarudin, Nur Fatin Farhanah Binti [1 ]
Azizan, Siti Nur Azieani Binti [1 ]
Rahman, Saadah Abdul [1 ]
Goh, Boon Tong [1 ]
机构
[1] Univ Malaya, Fac Sci, Dept Phys, Low Dimens Mat Res Ctr, Kuala Lumpur 50603, Malaysia
关键词
Core-shell nanowires; Nickel silicides; SiC; Metal-induced growth; HWCVD; SILICON-CARBIDE; OPTICAL-PROPERTIES; SIC FILMS; TEMPERATURE; NANOSTRUCTURES; HWCVD;
D O I
10.1016/j.tsf.2014.03.030
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
NiSi/SiC core-shell nanorods and nanowires grown on Ni-coated glass substrates by hot-wire chemical vapor deposition were studied. Nickel was used as a catalyst to induce the growth of these core-shell nanorods and nanowires at deposition pressures varying from 100 to 300 Pa. Increase of the deposition pressure to 300 Pa result in the growth of nanowires. These nanowires consisted of single crystalline NiSi and amorphous SiC as core and shell of the nanowires, respectively. Moreover, an increase in deposition pressure induces phase transition of the nanowires from the crystalline Si phase to amorphous SiC phase. 3C-SiC nano-crystallites embedded within an amorphous matrix were present in the nanowires shells, and broad photoluminescence emission spectra were observed within the visible region. The effects of the deposition pressure on the growth and structural properties of these core-shell nanowires are discussed. (C) 2014 Elsevier B. V. All rights reserved.
引用
收藏
页码:243 / 248
页数:6
相关论文
共 50 条
  • [21] Quality and Growth Rate of Hot-Wire Chemical Vapor Deposition Epitaxial Si Layers
    Teplin, Charles W.
    Martin, Ina T.
    Jones, Kim M.
    Young, David
    Romero, Manuel J.
    Reedy, Robert C.
    Branz, Howard M.
    Stradins, Paul
    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008, 2008, 1066 : 285 - 289
  • [22] Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition
    Thiesen, J
    Iwaniczko, E
    Jones, KM
    Mahan, A
    Crandall, R
    APPLIED PHYSICS LETTERS, 1999, 75 (07) : 992 - 994
  • [23] Photoluminescence and structural properties of Si/SiC core-shell nanowires growth by HWCVD
    Nazarudin, Nur Fatin Farhanah Binti
    Noor, Nurul Jannah Binti Mohd
    Rahman, Saadah Abdul
    Goh, Boon Tong
    JOURNAL OF LUMINESCENCE, 2015, 157 : 149 - 157
  • [24] Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique
    Chong, Su Kong
    Goh, Boon Tong
    Dee, Chang Fu
    Rahman, Saadah Abdul
    MATERIALS CHEMISTRY AND PHYSICS, 2012, 135 (2-3) : 635 - 643
  • [25] Structural analysis of nanocrystalline silicon prepared by hot-wire chemical vapor deposition on polymer substrates
    Adachi, Michael M.
    Taghibakhsh, Farhad
    Kavanagh, Karen L.
    Karim, Karim S.
    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007, 2007, 989 : 517 - +
  • [26] Amorphous silicon nitride deposited by hot-wire chemical vapor deposition
    Liu, FZ
    Ward, S
    Gedvilas, L
    Keyes, B
    To, B
    Wang, Q
    Sanchez, E
    Wang, SL
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) : 2973 - 2979
  • [27] A numerical model for hot-wire chemical vapor deposition of amorphous silicon
    Goodwin, DG
    AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 : 79 - 84
  • [28] Attempt to synthesize carbon nanotubes by hot-wire chemical vapor deposition
    Yokomichi, H
    Sakai, F
    Ichihara, M
    Kishimoto, N
    THIN SOLID FILMS, 2001, 395 (1-2) : 253 - 256
  • [29] Hot-wire chemical vapor deposition of silicon nanoparticles on fused silica
    Salivati, Navneethakrishnan
    An, Yong Q.
    Downer, Michael C.
    Ekerdt, John G.
    THIN SOLID FILMS, 2009, 517 (12) : 3481 - 3483
  • [30] Continuous hot-wire chemical vapor deposition on moving glass substrates
    Bink, A.
    Brinza, M.
    Jongen, J. P. H.
    Schropp, R. E. I.
    THIN SOLID FILMS, 2009, 517 (12) : 3588 - 3590