Surface Reconstructions on GaN and InN Semipolar (20(2)over-bar1) Surfaces

被引：12
|
作者：
Yamashita, Tomoki [1 ]
Akiyama, Toru [1 ]
Nakamura, Kohji [1 ]
Ito, Tomonori [1 ]
机构：
[1] Mie Univ, Dept Engn Phys, Tsu, Mie 5148507, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 01期
基金：
日本学术振兴会;
关键词：
PSEUDOPOTENTIALS; POLAR;
D O I：
10.1143/JJAP.49.018001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The reconstructions on semipolar GaN(20 (2) over bar1) and InN(20 (2) over bar1) surfaces are investigated on the basis of first-principles total-energy calculations. The surface formation energy clarifies that there are several reconstructions depending on the growth conditions. For GaN, the surface where topmost N atoms are desorbed is stable under N-rich conditions, whereas a metallic reconstruction with a Ga adlayer is stabilized under Ga-rich conditions. For InN, in contrast, the surface with an In adlayer is favorable regardless of the growth conditions. We also provide immediate access to the atomic structures of semipolar (20 (2) over bar1) surfaces under realistic growth conditions using surface phase diagrams. (C) 2010 The Japan Society of Applied Physics
引用
收藏
页数：2
相关论文
共 50 条
  • [31] Semipolar (20(2)over-bar1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy
    Sawicka, Marta
    Muziol, Grzegorz
    Turski, Henryk
    Feduniewicz-Zmuda, Anna
    Krysko, Marcin
    Grzanka, Szymon
    Grzanka, Ewa
    Smalc-Koziorowska, Julita
    Albrecht, Martin
    Kucharski, Robert
    Perlin, Piotr
    Skierbiszewski, Czeslaw
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (02):
  • [32] Carrier transport in dichromatic color-coded semipolar (20(21)over-bar) and (20(2)over-bar1) III-nitride LEDs
    Kisin, Mikhail V.
    Huang, Chih-Li
    El-Ghoroury, Hussein S.
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXII, 2014, 8980
  • [33] 384 nm laser diode grown on a (20(2)over-bar1) semipolar relaxed AlGaN buffer layer
    Haeger, Daniel A.
    Young, Erin C.
    Chung, Roy B.
    Wu, Feng
    Pfaff, Nathan A.
    Tsai, Min
    Fujito, Kenji
    DenBaars, Steven P.
    Speck, James S.
    Nakamura, Shuji
    Cohen, Daniel A.
    APPLIED PHYSICS LETTERS, 2012, 100 (16)
  • [34] Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (20(2)over-bar1) substrates
    Sawicka, M.
    Cheze, C.
    Turski, H.
    Muziol, G.
    Grzanka, S.
    Hauswald, C.
    Brandt, O.
    Siekacz, M.
    Kucharski, R.
    Remmele, T.
    Albrecht, M.
    Krysko, M.
    Grzanka, E.
    Sochacki, T.
    Skierbiszewski, C.
    APPLIED PHYSICS LETTERS, 2013, 102 (11)
  • [35] Strain relaxation in semipolar (20(2)over-bar1) InGaN grown by plasma assisted molecular beam epitaxy
    Sawicka, M.
    Krysko, M.
    Muziol, G.
    Turski, H.
    Siekacz, M.
    Wolny, P.
    Smalc-Koziorowska, J.
    Skierbiszewski, C.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (18)
  • [36] Semipolar (20(2)over-bar1) GaN templates on sapphire: 432nm InGaN light-emitting diodes and light extraction simulations
    Khoury, Michel
    Li, Hongjian
    Bonef, Bastien
    Kuritzky, Leah Y.
    Mughal, Asad J.
    Nakamura, Shuji
    Speck, James S.
    DenBaars, Steven P.
    APPLIED PHYSICS EXPRESS, 2018, 11 (03)
  • [37] Reconstructions and electronic structure of (11(2)over-bar2) and (11(2)over-bar(2)over-bar) semipolar AlN surfaces
    Kalesaki, E.
    Lymperakis, L.
    Kioseoglou, J.
    Neugebauer, J.
    Karakostas, Th
    Komninou, Ph
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (03)
  • [38] High-Power (over 100 mW) Green Laser Diodes on Semipolar {20(2)over-bar1} GaN Substrates Operating at Wavelengths beyond 530 nm
    Takagi, Shimpei
    Enya, Yohei
    Kyono, Takashi
    Adachi, Masahiro
    Yoshizumi, Yusuke
    Sumitomo, Takamichi
    Yamanaka, Yuichiro
    Kumano, Tetsuya
    Tokuyama, Shinji
    Sumiyoshi, Kazuhide
    Saga, Nobuhiro
    Ueno, Masaki
    Katayama, Koji
    Ikegami, Takatoshi
    Nakamura, Takao
    Yanashima, Katsunori
    Nakajima, Hiroshi
    Tasai, Kunihiko
    Naganuma, Kaori
    Fuutagawa, Noriyuki
    Takiguchi, Yoshiro
    Hamaguchi, Tatsushi
    Ikeda, Masao
    APPLIED PHYSICS EXPRESS, 2012, 5 (08)
  • [39] Stability of Magnesium-Incorporated Semipolar GaN(10(1)over-bar(1)over-bar) Surfaces
    Akiyama, Toru
    Ammi, Daisuke
    Nakamura, Kohji
    Ito, Tomonori
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (11)
  • [40] Properties of near-field photoluminescence in green emitting single and multiple semipolar (20(2)over-bar1) plane InGaN/GaN quantum wells
    Mensi, Mounir D.
    Becerra, Daniel L.
    Ivanov, Ruslan
    Marcinkevicius, Saulius
    Nakamura, Shuji
    DenBaars, Steven P.
    Speck, James S.
    OPTICAL MATERIALS EXPRESS, 2016, 6 (01): : 39 - 45
12345