Chemical solution processing and properties of (Bi,Nd)4Ti3O12 ferroelectric thin films

Low-temperature processing of (Bi,Nd)(4)Ti3O12 (BNT) thin films was investigated by a chemical solution deposition method, and their ferroelectric properties, crystallinity and microstructure were characterized. BNT thin films were prepared on Pt/TiOx/SiO2/Si substrates by a spin-coating technique using metal-organic, precursor solutions. The BNT precursor films crystallized into the Bi4Ti3O12 (BIT) structure above 600degreesC. The synthesized BNT films exhibited high crystallinity with low (00l) preferred orientation. BNT thin films prepared at 600degreesC showed a homogeneous and dense microstructure with a grain size of 50-100 nm. They also showed a well-saturated P-E hysteresis curve with a P-r of 7.0 muC/cm(2) and E-c of 83 kV/cm. The Nd-substitution for the Bi site in the BIT structure was found to be effective for promoting the (117) preferred-orientation and for improving the ferroelectric properties of the resultant films.