Activating ion implants in 4H-SiC by annealing with an AlN or BN cap

被引：0
|
作者：
Jones, KA [1 ]
Shah, PB [1 ]
Ervin, MH [1 ]
Derenge, MA [1 ]
Vispute, RD [1 ]
Freitas, JA [1 ]
Gerardi, GJ [1 ]
机构：
[1] USA, Res Lab, Adelphi, MD 20783 USA
来源：
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXVI AND WIDE BANDGAP SEMICONDUCTORS FOR PHOTONIC AND ELECTRONIC DEVICES AND SENSORS II | 2002年 / 2002卷 / 03期
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中图分类号：
R5 [内科学];
学科分类号：
1002 ; 100201 ;
摘要：
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页码：117 / 122
页数：6
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