Enhanced wavelength tuning of an InGaAsP-InP laser with a thermal-strain-magnifying trench

被引:7
|
作者
Cohen, DA [1 ]
Mason, B [1 ]
Dolan, J [1 ]
Burns, C [1 ]
Coldren, LA [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
关键词
D O I
10.1063/1.1319527
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have used temperature-dependent strain from differential thermal expansion to increase the temperature tuning rate, d lambda/dT, of the modal wavelength of an InP-based laser. The effectiveness of the strain may be further enhanced with a deep trench etch beneath the laser waveguide. We have obtained a 50% increase in the tuning rate, without degradation of the threshold current, and a maximum increase of 86%. (C) 2000 American Institute of Physics. [S0003-6951(00)00243-6].
引用
收藏
页码:2629 / 2631
页数:3
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