Spectroscopic investigation of near-surface and surface quantum well structures of semiconductors

A comprehensive and spectroscopic investigation, including absorption(AB), Photoluminescence (PL) and Photoreflectance (PR) experiments on the electronic states and their optical transitions in some near-surface and surface quantum,well structures of semiconductors are performed and reported here in this paper. The strain relaxation as a function of capping layer, the electronic states on the surface quantum well and the dependence of transition related surface Si delta doping on doping concentration.