Spectroscopic investigation of near-surface and surface quantum well structures of semiconductors

被引：0
|
作者：
Shen, SC [1 ]
Chen, XS [1 ]
Lu, W [1 ]
Wan, MF [1 ]
Liu, XQ [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 1998年 / 3175卷
关键词：
D O I：
10.1117/12.300637
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A comprehensive and spectroscopic investigation, including absorption(AB), Photoluminescence (PL) and Photoreflectance (PR) experiments on the electronic states and their optical transitions in some near-surface and surface quantum,well structures of semiconductors are performed and reported here in this paper. The strain relaxation as a function of capping layer, the electronic states on the surface quantum well and the dependence of transition related surface Si delta doping on doping concentration.
引用
收藏
页码：2 / 8
页数：7
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