Floating Gate Memory-based Monolayer MoS2 Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics

被引：109

作者：

Wang, Jingli ^{[1
,2
]}

Zou, Xuming ^{[1
,2
]}

Xiao, Xiangheng ^{[1
,2
]}

Xu, Lei ^{[1
,2
]}

Wang, Chunlan ^{[1
,2
]}

Jiang, Changzhong ^{[1
,2
]}

Ho, Johnny C. ^{[3
]}

Wang, Ti ^{[1
,2
]}

Li, Jinchai ^{[1
,2
]}

Liao, Lei ^{[1
,2
]}

机构：

[1] Wuhan Univ, Dept Phys, Minist Educ, Wuhan 430072, Peoples R China

[2] Wuhan Univ, Minist Educ, Key Lab Artificial Micro & Nanostruct, Wuhan 430072, Peoples R China

[3] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

来源：

SMALL | 2015年 / 11卷 / 02期

关键词：

work functions; MoS2; metallic nanocrystals; floating gates; flash memory; NONVOLATILE MEMORY; GRAPHENE; NANOPARTICLES; TECHNOLOGY; DEVICES; STATES;

D O I：

10.1002/smll.201401872

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Charge trapping layers are formed from different metallic nanocrystals in MoS2-based nanocrystal floating gate memory cells in a process compatible with existing fabrication technologies. The memory cells with Au nanocrystals exhibit impressive performance with a large memory window of 10 V, a high program/erase ratio of approximately 105 and a long retention time of 10 years. © 2014 Wiley-VCH Verlag GmbH & Co. KGaA.

引用

页码：208 / 213

页数：6

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