Comparative study between conventional and diffusion-bonded Nd-doped vanadate crystals in the passively mode-locked operation

被引:17
|
作者
Huang, Y. J. [1 ]
Huang, Y. P. [1 ]
Liang, H. C. [1 ]
Su, K. W. [1 ]
Chen, Y. F. [1 ]
Huang, K. F. [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30050, Taiwan
来源
OPTICS EXPRESS | 2010年 / 18卷 / 09期
关键词
SEMICONDUCTOR SATURABLE ABSORBER; PUMPED ND-GDVO4 LASER; COMPOSITE CRYSTAL; END; PERFORMANCE; LOCKING;
D O I
10.1364/OE.18.009518
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We design a reliable linear three-element cavity to make a comparative study between the conventional and diffusion-bonded Nd:GdVO4 crystals in the passively mode-locked operation. Experimental investigations reveal that the mode-locked pulse width obtained with the diffusion-bonded crystal is considerably broader than that obtained with the conventional crystal, even though the diffusion-bonded crystal can significantly reduce the thermal effects. The pulse broadening is experimentally verified to come from the length of the undoped part that brings in a reduction of the spatial-hole-burning (SHB) effect. (C) 2010 Optical Society of America
引用
收藏
页码:9518 / 9524
页数:7
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