Photoelectrochemical performances of kesterite Ag2ZnSnSe4 photoelectrodes in the salt-water and water solutions

被引:15
|
作者
Cheng, Kong-Wei [1 ,2 ,3 ]
机构
[1] Chang Gung Univ, Dept Chem & Mat Engn, 259 Wen Hwa 1st Rd, Taoyuan 333, Taiwan
[2] Chang Gung Mem Hosp, Dept Orthopaed Surg, Keelung Branch, 5 Fu Shing St, Taoyuan 333, Taiwan
[3] Chang Gung Univ, Green Technol Res Ctr, Solar Cell Grp, 259 Wen Hwa 1st Rd, Taoyuan 333, Taiwan
关键词
Metal selenides; Thermal evaporation; Photoelectrodes; Salt water splitting; THIN-FILMS; SEMICONDUCTOR; CU2ZNSNSE4; METAL; PHOTORESPONSE; PHOTOCATHODE; GROWTH; CELLS;
D O I
10.1016/j.jtice.2017.03.042
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
In this study, we prepare quaternary silver-zinc-tin-selenide samples on various substrates using the selenization of thermally evaporated silver-zinc-tin metal precursors. The [Zn]/[Sn] molar ratio in metal precursors is verified to study its influence on the structural, optical and photoelectrochemical properties of the Ag-Zn-Sn-Se samples in various electrolytes. After various selenization tests, a selenization process with the temperature of 410 degrees C and time of 90 min is employed for the preparation of quaternary Ag-Zn-Sn-Se samples. X-ray diffraction patterns and Raman spectra of samples show that the crystal phases of samples change from the cubic AgSnSe2/kesterite Ag2ZnSnSe4 mixing phases, the kesterite Ag2ZnSnSe4 phase to the kesterite Ag2ZnSnSe4/cubic ZnSe mixing phases with an increase in the [Zny[Sn] molar ratio in the metal precursors. Direct energy band gaps of samples locate in the range of 1.30-1.34 eV. Carrier concentration and mobility of samples are in the ranges of 8.99 x 10(15)-5.97 x 10(15) cm(-3) and 7.72-76.08 cm(2)/V s, respectively. The sample with the [Zn][Sn] molar ratio of 1.42 has the maximum photo-enhancement current density of 5.69 and 11.12 mA/cm(2) at an applied bias of +1.0 V vs. an Ag/AgCI electrode in the 0.5 M K2SO4 and 1 M NaCI aqueous solution, respectively. (C) 2017 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:199 / 208
页数:10
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