Optimum mode of operation for a low energy focused ion beam system

被引:5
|
作者
Rauscher, M [1 ]
Plies, E [1 ]
机构
[1] Univ Tubingen, Inst Phys Appl, D-72076 Tubingen, Germany
来源
关键词
D O I
10.1116/1.1809630
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The system design and mode of operation for a dedicated low energy focused ion beam system based on immersion optics is presented. The ion beam is accelerated using a gun lens and the intermediate lens space is set on high potential. Beam retarding to the landing energy is accomplished within the objective lens. With this design the target is field free and can be kept on ground potential. As all voltage levels are comparatively low, both gun as well as objective lens can be operated in accel mode, thus improving system performance. The influence of Coulomb interactions is also taken into account. Calculations predict a spot size of approximately 80 nm and a corresponding probe current density of I A/cm(2) at a working distance of 15 mm and a final beam energy of 3 keV, respectively. (C) 2004 American Vacuum Society.
引用
收藏
页码:3004 / 3007
页数:4
相关论文
共 50 条
  • [21] Operation of a single column focused ion/electron beam system based on a dual ion/electron source
    Chen, LW
    Wang, YL
    APPLIED PHYSICS LETTERS, 1998, 73 (15) : 2212 - 2214
  • [22] Maskless deposition of Au on GaAs by low-energy focused ion beam
    Kito, K
    Yanagisawa, J
    Monden, K
    Nakayama, H
    Yuba, Y
    Gamo, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12B): : 6853 - 6856
  • [23] Maskless deposition of Au on GaAs by low-energy focused ion beam
    Kito, Kuniyoshi
    Yanagisawa, Junichi
    Monden, Kentaro
    Nakayama, Hiromasa
    Yuba, Yoshihiko
    Gamo, Kenji
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (12 B): : 6853 - 6856
  • [24] Modification of stainless steel by low-energy focused nitrogen ion beam
    Lopatin, I. V.
    Akhmadeev, Yu H.
    Krysina, O. V.
    Prokopenko, N. A.
    Petrikova, E. A.
    Ryabchikov, A. I.
    Sivin, D. O.
    Korneva, O. S.
    6TH INTERNATIONAL CONGRESS ENERGY FLUXES AND RADIATION EFFECTS, 2018, 1115
  • [25] Optical properties of a low energy focused ion beam apparatus for direct deposition
    Nagamachi, S
    Ueda, M
    Yamakage, Y
    Maruno, H
    Ishikawa, J
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1997, 68 (06): : 2331 - 2338
  • [26] GaAs microcrystal growth on semiconductor surfaces by low energy focused ion beam
    Chikyow, T
    Koguchi, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04): : 2538 - 2542
  • [27] Beam diameter measurement in focused ion beam system
    Zhang, Haibo
    Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology, 2000, 20 (05): : 319 - 321
  • [28] Beam drift in submicron focused ion beam system
    Tsinghua Univ, Beijing, China
    Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology, 1997, 17 (03): : 167 - 174
  • [29] Position controlled GaN nano-structures fabricated by low energy focused ion beam system.
    Nagata, T
    Ahmet, P
    Koida, T
    Chichibu, SF
    Chikyow, T
    RADIATION EFFECTS AND ION-BEAM PROCESSING OF MATERIALS, 2004, 792 : 605 - 609
  • [30] Alignment Method of Ion Beam Axis in Focused Ion Beam System
    Park, Cheol Woo
    Lee, Jong Hang
    Kang, Seung Oun
    TRANSACTIONS OF THE KOREAN SOCIETY OF MECHANICAL ENGINEERS A, 2006, 30 (09) : 1166 - 1172