Inverted Top-emitting OLEDs with a n-type Si as Cathode

被引：0
|
作者：
Chen, Shu-ming [1 ]
Yuan, Yong-bo [1 ]
Lian, Jia-rong [1 ]
Zhou, Xiang [1 ]
机构：
[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China
来源：
AD'07: Proceedings of Asia Display 2007, Vols 1 and 2 | 2007年
关键词：
inverted; top-emitting OLEDs; n-Si;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report a significant enhancement of the electron injection by inserting a 1-nm-thick Ba electron injection layer between n-Si cathode and tris (8-hydroxyquinoline) aluminum (Alq(3)) in inverted top-emitting OLEDs. The turn-on voltages of the OLEDs decreased dramatically from 20 V to 9 V and the efficiencies were significantly enhanced by a factor of 13 with Ba electron injection layer, which played a role in reducing the energy barrier for the electron injection, leading to the reduction of the turn-on voltages and the enhancement of the efficiencies of the n-Si based inverted top-emitting OLEDs.
引用
收藏
页码：164 / 167
页数：4
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