共 50 条
- [21] Characteristics of Ag etching using inductively coupled Cl2-based plasmas [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (01): : 286 - 290
- [23] Cl2-based dry etching of the AlGaInN system in inductively coupled plasmas [J]. POWER SEMICONDUCTOR MATERIALS AND DEVICES, 1998, 483 : 327 - 332
- [24] Characteristics of Ag etching using inductively coupled Cl2-based plasmas [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (01): : 286 - 290
- [25] Characteristics of Ir etching using Ar/Cl2 inductively coupled plasmas [J]. Journal of Materials Science, 2005, 40 : 5015 - 5016
- [27] Plasma diagnostics in inductively coupled plasma etching using Cl2/Xe [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (3 A): : 1435 - 1436
- [28] Plasma diagnostics in inductively coupled plasma etching using Cl2/Xe [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (3A): : 1435 - 1436
- [30] Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas [J]. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998, 16 (3 pt 2):