A theoretical descriptor for screening efficient NO reduction electrocatalysts from transition-metal atoms on N-doped BP monolayer

被引:69
|
作者
Wu, Jie [1 ]
Yu, Yang-Xin [1 ]
机构
[1] Tsinghua Univ, Dept Chem Engn, Lab Chem Engn Thermodynam, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
Ammonia synthesis; Boron phosphide; Density functional theory; Nitric oxide reduction reaction; Single-atom catalyst; ELECTROCHEMICAL AMMONIA-SYNTHESIS; NITRIC-OXIDE; NITROGEN-FIXATION; REACTION PATHWAYS; HYDROGEN; WATER; OXYGEN; TRANSFORMATION; SOLUBILITY; DYNAMICS;
D O I
10.1016/j.jcis.2022.05.034
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
An electrochemical nitric oxide (NO) reduction reaction (NORR) is proposed as an attractive method for simultaneous realization of NO removal and ammonia (NH3) synthesis. Here, the potentials of 29 transition-metal atoms anchored on the nitrogen-doped BP monolayer (MN3/BP) as efficient NORR catalysts are systematically examined using first-principles calculations. Combining the adsorption Gibbs free energies of the N and OH species, a simple descriptor is constructed and a volcano plot of the NORR limiting potentials on the single atom catalysts (SACs) is established. Consequently, the MoN3/BP and IrN3/BP SACs are picked out as promising NORR electrocatalysts for NH3 synthesis with the limiting potentials of-0.10 V and-0.06 V, respectively. Their corresponding rate constants are significantly larger than or close to that of the excellent Pt(1 1 1) surface. The electronic analysis shows that the Mo-4d or Ir-5d orbitals can be well hybridized with the NO-2p orbitals, sufficiently activating the adsorbed NO species. Particularly, the MoN3 /BP and IrN3/BP SACs possess high thermal stabilities and can be easily synthesized by using MoCl3 and IrCl3 as precursors, respectively. This work not only offers a simple descriptor to efficiently design NORR electrocatalysts but also provides a comprehensive atomic understanding on the mechanism of NO-to-NH(3)conversion. (C) 2022 Elsevier Inc. All rights reserved.
引用
收藏
页码:432 / 444
页数:13
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