Laser-Assisted Simulation of Transient Radiation Effects in Heterostructure Components Based on AIIIBV Semiconductor Compounds

被引：5

作者：

Gromov, D. V. ^{[1
]}

Maltsev, P. P. ^{[2
]}

Polevich, S. A. ^{[3
]}

机构：

[1] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia

[2] Russian Acad Sci, Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia

[3] ENPO Specialized Electron Syst, Moscow 115409, Russia

来源：

SEMICONDUCTORS | 2016年 / 50卷 / 02期

关键词：

GaAs; Laser Radiation; Ionize Radiation; IIIB Versus; Dose Power;

D O I：

10.1134/S1063782616020093

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The possibility of the simulation of transient radiation effects using laser radiation in microwave heterostructure elements based on A(III)B(V) semiconductor compounds is studied. The results of the laser simulation of transient radiation effects in pseudomorphous high-electron mobility transistors (pHEMTs) based on AlGaAs/InGaAs/GaAs heterostructures are reported. It is shown that, for the adequate simulation of transient effects in devices on GaAs substrates, one should use laser radiation with a wavelength of lambda = 880-900 nm taking into account the dominant mechanisms of ionization in the transistor regions.

引用

页码：222 / 227

页数：6

共 31 条

[21] Physical principles of laser simulation for the transient radiation response of semiconductor structures, active circuit elements, and circuits: A linear model
Nikiforov A.Y.
Skorobogatov P.K.
Russian Microelectronics, 2004, 33 (2) : 68 - 79
[22] Physical principles of laser simulation for the transient radiation response of semiconductor structures, active circuit elements, and circuits: A nonlinear model
Nikiforov A.Y.
Skorobogatov P.K.
Russian Microelectronics, 2006, 35 (3) : 138 - 149
[23] Effects of filling material and laser power on the formation of intermetallic compounds during laser-assisted friction stir butt welding of steel and aluminum alloys
Fei, Xinjiang
Jin, Xiangzhong
Peng, Nanxiang
Ye, Ying
Wu, Sigen
Dai, Houfu
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 122 (11):
[24] Effects of filling material and laser power on the formation of intermetallic compounds during laser-assisted friction stir butt welding of steel and aluminum alloys
Xinjiang Fei
Xiangzhong Jin
Nanxiang Peng
Ying Ye
Sigen Wu
Houfu Dai
Applied Physics A, 2016, 122
[25] Analysis of radiation effects of semiconductor devices based on numerical simulation Fermi-Dirac
Hu, Zhanhan
Hernandez, Danaysa Macias
Martinez, Silega Nemuri
NONLINEAR ENGINEERING - MODELING AND APPLICATION, 2022, 11 (01): : 252 - 259
[26] Transient radiation effects in microwave monolithic integrated circuits based on heterostructure field-effect transistors: Experiment and model
Elesin V.V.
Russian Microelectronics, 2014, 43 (2) : 139 - 147
[27] CMOS IC transient radiation effects investigations, model verification and parameter extraction with the test structures laser simulation tests
Nikiforov, AY
Chumakov, AI
Skorobogatov, PK
ICMTS 1996 - 1996 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, PROCEEDINGS, 1996, : 253 - 258
[28] Optimization of laser irradiation parameters for simulation of a transient radiation response in thin-film silicon-based microcircuits
Skorobogatov P.K.
Nikiforov A.Y.
Egorov A.N.
Russian Microelectronics, 2015, 44 (1) : 8 - 21
[29] Effects of Structural Radiation Disorder in the Near-Surface Layer of Alloys Based on NbTiVZr Compounds Depending on the Variation of Alloy Components
Giniyatova, Sholpan G.
Kadyrzhanov, Kayrat K.
Shlimas, Dmitriy I.
Borgekov, Daryn B.
Uglov, Vladimir V.
Kozlovskiy, Artem L.
Zdorovets, Maxim V.
CRYSTALS, 2023, 13 (11)
[30] Study of a Semiconductor Disk Laser with a Wavelength of 780 nm Based on a Heterostructure with AlxGa1 –xAs/AlyGa1 –yAs Quantum Wells under Optical Pumping with Different Radiation Wavelengths
V. I. Kozlovskii
S. M. Zhenishbekov
Ya. K. Skasyrskii
M. P. Frolov
A. Yu. Andreev
I. V. Yarotskaya
A. A. Marmalyuk
Bulletin of the Lebedev Physics Institute, 2023, 50 : S1348 - S1355

← 1 2 3 4 →