Laser-Assisted Simulation of Transient Radiation Effects in Heterostructure Components Based on AIIIBV Semiconductor Compounds

The possibility of the simulation of transient radiation effects using laser radiation in microwave heterostructure elements based on A(III)B(V) semiconductor compounds is studied. The results of the laser simulation of transient radiation effects in pseudomorphous high-electron mobility transistors (pHEMTs) based on AlGaAs/InGaAs/GaAs heterostructures are reported. It is shown that, for the adequate simulation of transient effects in devices on GaAs substrates, one should use laser radiation with a wavelength of lambda = 880-900 nm taking into account the dominant mechanisms of ionization in the transistor regions.