Stacked InAs quantum dots in InP studied by cross-sectional scanning tunnelling microscopy

被引：15

作者：

Ouattara, L ^{[1
]}

Mikkelsen, A ^{[1
]}

Lundgren, E ^{[1
]}

Borgström, M ^{[1
]}

Samuelson, L ^{[1
]}

Seifert, W ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

来源：

NANOTECHNOLOGY | 2004年 / 15卷 / 12期

关键词：

D O I：

10.1088/0957-4484/15/12/001

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on cross-sectional scanning tunnelling microscopy (XSTM) measurements on vertically stacked InAs quantum dots in InP barriers. We have investigated two-, five- and tenfold stacked quantum dot structures,grown by low-pressure metal-organic vapour phase epitaxy. The XSTM images reveal that the quantum dots are generally vertically well aligned, and have a truncated pyramidal shape in agreement with similar studies of InAs dots in GaAs. STM images displaying atomic resolution indicate that the dots have a pure InAs stoichiometry, with intermixing only occurring in the top and bottom dot rows. Further, we have investigated various anomalies (considered as defects) as observed in the quantum dot stacks. The origins of these anomalies are discussed and compared to theoretical predictions available so far.

引用

页码：1701 / 1707

页数：7

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