Tutorial: Organic field-effect transistors: Materials, structure and operation

被引:151
|
作者
Lamport, Zachary A. [1 ]
Haneef, Hamna F.
Anand, Sajant
Waldrip, Matthew
Jurchescu, Oana D.
机构
[1] Wake Forest Univ, Dept Phys, 1834 Wake Forest Rd, Winston Salem, NC 27109 USA
基金
美国国家科学基金会;
关键词
THIN-FILM TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; CHARGE-CARRIER MOBILITY; TEMPERATURE-INDEPENDENT TRANSPORT; HIGH-ELECTRON-MOBILITY; LIGHT-EMITTING-DIODES; PHYSICAL VAPOR GROWTH; HIGH-PERFORMANCE; LOW-VOLTAGE; N-TYPE;
D O I
10.1063/1.5042255
中图分类号
O59 [应用物理学];
学科分类号
摘要
Chemical versatility and compatibility with a vast array of processing techniques has led to the incorporation of organic semiconductors in various electronic and opto-electronic devices. One such device is the organic field-effect transistor (OFET). In this tutorial, we describe the structure, operation, and characterization of OFETs. Following a short historical perspective, we introduce the architectures possible for OFETs and then describe the device physics and the methods for extracting relevant device parameters. We then provide a brief overview of the myriad organic semiconductors and deposition methods that were adopted for OFETs in the past decades. Nonideal device characteristics, including contact resistance, are then discussed along with their effects on electrical performance and on the accuracy of extracting device parameters. Finally, we highlight several measurements involving OFETs that allow access to fundamental properties of organic semiconductors and the mechanism of charge transport in these materials. Published by AIP Publishing.
引用
收藏
页数:25
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