Quantitative Scanning Microwave Microscopy: A calibration flow

被引：12
|
作者：
Schweinboeck, T. [1 ]
Hommel, S. [1 ]
机构：
[1] Infineon Technol, Failure Anal, D-85579 Neubiberg, Germany
来源：
MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 9-10期
关键词：
D O I：
10.1016/j.microrel.2014.07.024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A procedure for doping concentration calibration using Scanning Microwave Microscopy (SMM) is presented. Calibration measurements are performed at a purpose-built sample comprising a wide range of doping concentrations of both n- and p-type implants at the sample surface. In order to evaluate the criticality of parameters affecting the measured signal, a transmission line model is used that takes into account the physical elements forming the evaluated network including modelling parameters for the tip-sample-interaction. Using a vertical DMOS sample a showcase flow for quantification is exercised and the attainable degree of accuracy is discussed. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2070 / 2074
页数：5
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