EBIC characterization of strained Si/SiGe heterostructures

被引：5
|
作者：
Yakimov, E. B. [1 ]
Zhang, R. H.
Rozgonyi, G. A.
Seacrist, M.
机构：
[1] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Russia
[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[3] MEMC Elect Mat, St Peters, MO 63376 USA
来源：
SEMICONDUCTORS | 2007年 / 41卷 / 04期
基金：
美国国家科学基金会; 俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063782607040070
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Strained-Si/SiGe heterostructure is studied by EBIC. The effect of annealing at 800 degrees C is investigated. The EBIC images obtained at different beam energies are analyzed. The analysis of images obtained shows that misfit dislocation bunches in the graded SiGe layer could not explain the cross-hatch contrast dependence on E-h. Therefore, at least a part of this contrast should be associated with other defects located closer to the depletion region. It is assumed that dislocation trails could play the role of such defects.
引用
收藏
页码：402 / 406
页数：5
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