Effect of doping and counterdoping on high-pressure phase transitions of silicon

被引：9

作者：

Guo, J. J. ^{[1
]}

Pan, D. ^{[1
]}

Yan, X. Q. ^{[2
]}

Fujita, T. ^{[1
]}

Chen, M. W. ^{[1
]}

机构：

[1] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 25期

关键词：

phase transformations; Raman spectra; semiconductor doping; RAMAN-SCATTERING; POROUS SILICON; HYDROSTATIC-PRESSURE; SI; GE; STRESS; BORON; TRANSFORMATIONS; LUMINESCENCE; TEMPERATURE;

D O I：

10.1063/1.3457479

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of dopants and counterdopants on high-pressure phase transitions of silicon was investigated by high-pressure Raman microscopy. A small amount of dopants were found to dramatically influence the high pressure stability of silicon. The combination of doping and counterdoping provides an effective way to manipulate the critical pressures of the phase transitions, which offers unique insights on atomic mechanisms of high pressure phase transitions of Si. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457479]

引用

页数：3

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